Metal Oxide Layered Structure and Methods of Forming the Same

ABSTRACT

Some embodiment structures and methods are described. A structure includes an integrated circuit die at least laterally encapsulated by an encapsulant, and a redistribution structure on the integrated circuit die and encapsulant. The redistribution structure is electrically coupled to the integrated circuit die. The redistribution structure includes a first dielectric layer on at least the encapsulant, a metallization pattern on the first dielectric layer, a metal oxide layered structure on the metallization pattern, and a second dielectric layer on the first dielectric layer and the metallization pattern. The metal oxide layered structure includes a metal oxide layer having a ratio of metal atoms to oxygen atoms that is substantially 1:1, and a thickness of the metal oxide layered structure is at least 50 Å. The second dielectric layer is a photo-sensitive material. The metal oxide layered structure is disposed between the metallization pattern and the second dielectric layer.

PRIORITY CLAIM AND CROSS-REFERENCE

This application is a divisional of U.S. patent application Ser. No.16/051,273, filed on Jul. 31, 2018, entitled “Metal Oxide LayeredStructure and Methods of Forming the Same,” which application is adivisional of U.S. patent application Ser. No. 14/697,380, filed on Apr.27, 2015, entitled “Metal Oxide Layered Structure and Methods of Formingthe Same,” now U.S. Pat. No. 10,153,175 issued on Dec. 11, 2018, whichapplication claims priority to and the benefit of U.S. ProvisionalApplication No. 62/116,170, filed on Feb. 13, 2015, entitled “MetalOxide Layered Structure and Methods of Forming the Same,” whichapplications are hereby incorporated herein by reference in theirentirety.

BACKGROUND

Semiconductor devices are used in a variety of electronic applications,such as personal computers, cell phones, digital cameras, and otherelectronic equipment, as examples. Semiconductor devices are typicallyfabricated by sequentially depositing insulating or dielectric layers,conductive layers, and semiconductive layers of material over asemiconductor substrate, and patterning the various material layersusing lithography to form circuit components and elements thereon.Dozens or hundreds of integrated circuits are typically manufactured ona single semiconductor wafer. The individual dies are singulated bysawing the integrated circuits along a scribe line. The individual diesare then packaged separately, in multi-chip modules, or in other typesof packaging, for example.

The semiconductor industry continues to improve the integration densityof various electronic components (e.g., transistors, diodes, resistors,capacitors, etc.) by continual reductions in minimum feature size, whichallow more components to be integrated into a given area. These smallerelectronic components such as integrated circuit dies may also requiresmaller packages that utilize less area than packages of the past, insome applications.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1 through 3 are cross sectional views of general aspects ofintermediate steps during processing in accordance with someembodiments.

FIGS. 4A and 4B are a first example metal oxide layered structure and amethod of forming the metal oxide layered structure in accordance withsome embodiments.

FIGS. 5A and 5B are a second example metal oxide layered structure and amethod of forming the metal oxide layered structure in accordance withsome embodiments.

FIGS. 6A and 6B are a third example metal oxide layered structure and amethod of forming the metal oxide layered structure in accordance withsome embodiments.

FIGS. 7A and 7B are a fourth example metal oxide layered structure and amethod of forming the metal oxide layered structure in accordance withsome embodiments.

FIGS. 8A and 8B are a fifth example metal oxide layered structure and amethod of forming the metal oxide layered structure in accordance withsome embodiments.

FIGS. 9 through 23 are cross sectional views of intermediate stepsduring a process for forming a chip-on-package (CoP) and/or apackage-on-package (PoP) structure in accordance with some embodiments.

FIG. 24 is a CoP structure in accordance with some embodiments.

FIG. 25 is a first PoP structure in accordance with some embodiments.

FIG. 26 is a second PoP structure in accordance with some embodiments.

FIG. 27 is a third PoP structure in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. Similarly, termssuch as “front side” and “back side” may be used herein to more easilyidentify various components, and may identify that those components are,for example, on opposing sides of another component. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Embodiments discussed herein may be discussed in a specific context,namely a fan-out or fan-in wafer-level package, such as used in achip-on-package (CoP) and/or package-on-package (PoP) structure. Otherembodiments contemplate other applications, such as different packagetypes or different configurations that would be readily apparent to aperson of ordinary skill in the art upon reading this disclosure. Itshould be noted that embodiments discussed herein may not necessarilyillustrate every component or feature that may be present in astructure. For example, multiples of a component may be omitted from afigure, such as when discussion of one of the component may besufficient to convey aspects of the embodiment. Further, methodembodiments discussed herein may be discussed as being performed in aparticular order; however, other method embodiments may be performed inany logical order.

FIGS. 1 through 3 illustrate cross sectional views of general aspects ofintermediate steps during processing in accordance with someembodiments. FIG. 1 illustrates a first dielectric layer 30, ametallization pattern 32 on the first dielectric layer 30, and a nativeoxide 34 on the metallization pattern 32. In some embodiments, the firstdielectric layer 30 is formed of a polymer, which may be aphoto-sensitive material such as polybenzoxazole (PBO), polyimide,benzocyclobutene (BCB), or the like. The first dielectric layer 30 maybe formed by any acceptable deposition process, such as spin coating,laminating, the like, or a combination thereof, on any supportingsubstrate, some examples of which are described in the context ofsubsequent figures.

As an example to form metallization pattern 32, a seed layer (not shown)is formed on the first dielectric layer 30. In some embodiments, theseed layer is a metal layer, which may be a single layer or a compositelayer comprising a plurality of sub-layers formed of differentmaterials. In some embodiments, the seed layer comprises a titaniumlayer and a copper layer over the titanium layer. The seed layer may beformed using, for example, physical vapor deposition (PVD), sputtering,or the like. A photo resist is then formed and patterned on the seedlayer. The photo resist may be formed by spin coating or the like andmay be exposed to light for patterning. The pattern of the photo resistcorresponds to the metallization pattern 32. The patterning formsopenings through the photo resist to expose the seed layer. A metal isformed in the openings of the photo resist and on the exposed portionsof the seed layer. The metal may be formed by plating, such aselectroplating or electroless plating, or the like. The metal may becopper, nickel, cobalt, titanium, tungsten, aluminum, or the like. Then,the photo resist and portions of the seed layer on which the metal isnot formed are removed. The photo resist may be removed by an acceptableashing or stripping process, such as using an oxygen plasma or the like.Once the photo resist is removed, exposed portions of the seed layer areremoved, such as by using an acceptable etching process, such as by wetor dry etching. The remaining portions of the seed layer and metal formthe metallization pattern 32.

The native oxide 34 can be formed by the metal of the metallizationpattern 32 reacting with oxygen in an ambient environment. For example,the native oxide 34 can be formed by a reaction between the metal andwater, hydrogen peroxide, or the like when the metal is cleaned after anetching. Further, the native oxide 34 can be formed by a reactionbetween the metal and oxygen in air when the metal is exposed to air.The native oxide 34 can be formed by many ways.

In FIG. 2, a metal oxide layered structure 36 is formed on themetallization pattern 32. The metal oxide layered structure 36 can, insome embodiments, include the native oxide 34, or in other embodiment,the native oxide 34 can be removed. Examples and further details ofvarious metal oxide layered structures 36 are illustrated and discussedwith respect to FIGS. 4A-B, 5A-B, 6A-B, 7A-B, and 8A-B. The metal oxidelayered structure 36 includes a layer of a metal oxide consistingessentially of atoms of a metal, such as atoms of the metal of themetallization pattern 32, and atoms of oxygen at a ratio ofsubstantially 1:1 (solely for convenience, hereinafter such ratio isindicated as “Mx:O=1:1”). A ratio of substantially 1:1 can includeratios of 0.8:1 to 1.2:1, such as 0.9:1 to 1.1:1. For example, in someembodiments where the metallization pattern 32 is copper, the metaloxide layered structure 36 includes a layer of cupric oxide (CuO), and aratio of copper atoms to oxygen atoms in that layer is substantially1:1. One of ordinary skill in the art will readily understand that otherincidental atoms, such as of nitrogen and/or carbon, may be included ina layer of a metal oxide consisting essentially of atoms of a metal andatoms of oxygen at a ratio of substantially 1:1 as a result ofprocessing, for example.

In FIG. 3, a second dielectric layer 38 is formed on the metal oxidelayered structure 36 and the first dielectric layer 30. In someembodiments, the second dielectric layer 38 is formed of a polymer,which may be a photo-sensitive material such as polybenzoxazole (PBO),polyimide, benzocyclobutene (BCB), or the like. As used herein, aphoto-sensitive material includes a developed material that wasphoto-sensitive before developing. The second dielectric layer 38 may beformed by any acceptable deposition process, such as spin coating,laminating, the like, or a combination thereof.

FIGS. 4A and 4B illustrate a first example metal oxide layered structure36A and a method of forming the metal oxide layered structure 36A inaccordance with some embodiments. FIG. 4A illustrates the metallizationpattern 32, which in step 200 of FIG. 4B is formed as discussed withrespect to FIG. 1. As discussed further in FIG. 1, a native oxide 34 maybe formed on the metallization pattern 32. In step 202 of FIG. 4B, thenative oxide 34 is removed. The removal may be by an acceptable cleaningprocess, such as a nitrogen (N₂) plasma process. In step 204 of FIG. 4B,a metal oxide layer 40 having Mx:O=1:1 is formed directly on themetallization pattern 32. The metal oxide layer 40 can be formed bytreating the metallization pattern 32 with an oxygen-containing plasma,such as a plasma comprising oxygen (O₂), ozone (O₃), water (H₂O), thelike, or a combination thereof. The oxygen-containing plasma cancomprise additional plasma species, such as nitrogen (N₂), hydrogen(H₂), argon (Ar), the like, or a combination thereof. As an example, themetallization pattern 32 can be copper, and the metal oxide layer 40 canbe cupric oxide (CuO). As illustrated, the metal oxide layered structure36A consists of the metal oxide layer 40 having Mx:O=1:1. In step 206 ofFIG. 4B, the second dielectric layer 38 is formed on the metal oxidelayered structure 36A, as discussed with respect to FIG. 3.

FIGS. 5A and 5B illustrate a second example metal oxide layeredstructure 36B and a method of forming the metal oxide layered structure36B in accordance with some embodiments. FIG. 5A illustrates themetallization pattern 32, which in step 210 of FIG. 5B is formed asdiscussed with respect to FIG. 1. As discussed further in FIG. 1, anative oxide 34 may be formed on the metallization pattern 32. In step212 of FIG. 5B, the native oxide 34 is removed. The removal may be by anacceptable cleaning process, such as a nitrogen (N₂) plasma process. Instep 214 of FIG. 5B, a metal oxide layer 42 having Mx:O=1:1 is formeddirectly on the metallization pattern 32. The metal oxide layer 42 canbe formed by treating the metallization pattern 32 with anoxygen-containing plasma, such as a plasma comprising oxygen (O₂), ozone(O₃), water (H₂O), the like, or a combination thereof. Theoxygen-containing plasma can comprise additional plasma species, such asnitrogen (N₂), hydrogen (H₂), argon (Ar), the like, or a combinationthereof. In step 216 of FIG. 5B, a native oxide 44 is formed on themetal oxide layer 42. The native oxide 44 may be formed by exposing themetallization pattern 32 and metal oxide layer 42 to an ambient thatcontains oxygen, such as during a cleaning process that uses water or byexposing the structure to air. As an example, the metallization pattern32 can be copper; the metal oxide layer 42 can be cupric oxide (CuO);and the native oxide 44 can be cuprous oxide (Cu₂O). As illustrated, themetal oxide layered structure 36B consists of the metal oxide layer 42having Mx:O=1:1 and the native oxide 44. In step 218 of FIG. 5B, thesecond dielectric layer 38 is formed on the metal oxide layeredstructure 36B, as discussed with respect to FIG. 3.

FIGS. 6A and 6B illustrate a third example metal oxide layered structure36C and a method of forming the metal oxide layered structure 36C inaccordance with some embodiments. FIG. 6A illustrates the metallizationpattern 32, which in step 220 of FIG. 6B is formed as discussed withrespect to FIG. 1. As discussed further in FIG. 1, and in step 222 ofFIG. 6B, a native oxide 46 is formed directly on the metallizationpattern 32. In step 224 of FIG. 6B, a metal oxide layer 48 havingMx:O=1:1 is formed directly on the native oxide 46. The metal oxidelayer 48 can be formed by treating the native oxide 46 and metallizationpattern 32 with an oxygen-containing plasma, such as a plasma comprisingoxygen (O₂), ozone (O₃), water (H₂O), the like, or a combinationthereof. The oxygen-containing plasma can comprise additional plasmaspecies, such as nitrogen (N₂), hydrogen (H₂), argon (Ar), the like, ora combination thereof. As an example, the metallization pattern 32 canbe copper; the native oxide 46 can be cuprous oxide (Cu₂O); and themetal oxide layer 48 can be cupric oxide (CuO). As illustrated, themetal oxide layered structure 36C consists of the native oxide 46 andthe metal oxide layer 48 having Mx:O=1:1. In step 226 of FIG. 6B, thesecond dielectric layer 38 is formed on the metal oxide layeredstructure 36C, as discussed with respect to FIG. 3.

FIGS. 7A and 7B illustrate a fourth example metal oxide layeredstructure 36D and method of forming the metal oxide layered structure36D in accordance with some embodiments. FIG. 7A illustrates themetallization pattern 32, which in step 230 of FIG. 7B is formed asdiscussed with respect to FIG. 1. As discussed further in FIG. 1, anative oxide 34 may be formed on the metallization pattern 32. In step232 of FIG. 7B, the native oxide 34 is removed. The removal may be by anacceptable cleaning process, such as a nitrogen (N₂) plasma process. Instep 234 of FIG. 7B, a metal oxide layer 50 having Mx:O=1:1 is formeddirectly on the metallization pattern 32. The metal oxide layer 50 canbe formed by treating the metallization pattern 32 with anoxygen-containing plasma, such as a plasma comprising oxygen (O₂), ozone(O₃), water (H₂O), the like, or a combination thereof. Theoxygen-containing plasma can comprise additional plasma species, such asnitrogen (N₂), hydrogen (H₂), argon (Ar), the like, or a combinationthereof. In step 236 of FIG. 7B, a native oxide 52 is formed on themetal oxide layer 50. The native oxide 52 may be formed by exposing themetallization pattern 32 and metal oxide layer 50 to an ambient thatcontains oxygen, such as during a cleaning process that uses water or byexposing the structure to air. In step 238 of FIG. 7B, a metal oxidelayer 54 having Mx:O=1:1 is formed directly on the native oxide 52. Themetal oxide layer 54 can be formed by treating the native oxide 52,metal oxide layer 50, and metallization pattern 32 with anoxygen-containing plasma, such as a plasma comprising oxygen (O₂), ozone(O₃), water (H₂O), the like, or a combination thereof. Theoxygen-containing plasma can comprise additional plasma species, such asnitrogen (N₂), hydrogen (H₂), argon (Ar), the like, or a combinationthereof. As an example, the metallization pattern 32 can be copper; themetal oxide layer 50 can be cupric oxide (CuO); the native oxide 52 canbe cuprous oxide (Cu₂O); and the metal oxide layer 54 can be cupricoxide (CuO). As illustrated, the metal oxide layered structure 36Dconsists of the metal oxide layer 50 having Mx:O=1:1, the native oxide52, and the metal oxide layer 54 having Mx:O=1:1. In step 240 of FIG.7B, the second dielectric layer 38 is formed on the metal oxide layeredstructure 36D, as discussed with respect to FIG. 3.

FIGS. 8A and 8B illustrate a fifth example metal oxide layered structure36E and a method of forming the metal oxide layered structure 36E inaccordance with some embodiments. FIG. 8A illustrates the metallizationpattern 32, which in step 250 of FIG. 8B is formed as discussed withrespect to FIG. 1. As discussed further in FIG. 1, and in step 252 ofFIG. 8B, a native oxide 56 is formed directly on the metallizationpattern 32. In step 254 of FIG. 8B, a metal oxide layer 58 havingMx:O=1:1 is formed directly on the native oxide 56. The metal oxidelayer 58 can be formed by treating the native oxide 56 and metallizationpattern 32 with an oxygen-containing plasma, such as a plasma comprisingoxygen (O₂), ozone (O₃), water (H₂O), the like, or a combinationthereof. The oxygen-containing plasma can comprise additional plasmaspecies, such as nitrogen (N₂), hydrogen (H₂), argon (Ar), the like, ora combination thereof. In step 256 of FIG. 8B, a native oxide 60 isformed on the metal oxide layer 58. The native oxide 60 may be formed byexposing the metallization pattern 32 and metal oxide layer 58 to anambient that contains oxygen, such as during a cleaning process thatuses water or by exposing the structure to air. As an example, themetallization pattern 32 can be copper; the native oxide 56 can becuprous oxide (Cu₂O); the metal oxide layer 58 can be cupric oxide(CuO); and the native oxide 60 can be cuprous oxide (Cu₂O). Asillustrated, the metal oxide layered structure 36E consists of thenative oxide 56, the metal oxide layer 58 having Mx:O=1:1, and thenative oxide 60. In step 258 of FIG. 8B, the second dielectric layer 38is formed on the metal oxide layered structure 36E, as discussed withrespect to FIG. 3.

A metal oxide layered structure 36, such as metal oxide layeredstructures 36A, 36B, 36C, 36D, and 36E, can promote adhesion between theunderlying metallization and the overlying dielectric layer, which canbe a photo-sensitive material, as discussed above. Hence, the metaloxide layered structure 36 can be referred to as an adhesion structure.In some embodiments, a thickness of the metal oxide layered structure 36is greater than or equal to about 50 Å, such as in a range from about 50Å to about 200 Å, and more particularly in a range from about 50 Å toabout 100 Å. For example, a thickness of a metal oxide layer havingMx:O=1:1 of a metal oxide layered structure 36, such as the metal oxidelayer 40 of the metal oxide layered structure 36A, is greater than orequal to about 50 Å, such as in a range from about 50 Å to about 200 Å,and more particularly in a range from about 50 Å to about 100 Å. It hasbeen found that a thickness of a metal oxide layered structure 36greater than or equal to about 50 Å increases adhesion.

It should be noted that although specific examples have been providedusing copper, cupric oxide, and cuprous oxide, other metals and oxidesmay be used. One of ordinary skill in the art will readily understandvarious oxides that may be formed when a different metal, such asnickel, cobalt, titanium, tungsten, aluminum, or the like, are used.

FIGS. 9 through 23 illustrate cross sectional views of intermediatesteps during a process for forming a chip-on-package (CoP) and/or apackage-on-package (PoP) structure in accordance with some embodiments.FIG. 9 illustrates a carrier substrate 100 and a release layer 102formed on the carrier substrate 100. The carrier substrate 100 may be aglass carrier substrate, a ceramic carrier substrate, or the like. Thecarrier substrate 100 may be a wafer, such that multiple packages can beformed on the carrier substrate 100 simultaneously. The release layer102 may be formed of a polymer-based material, which may be removedalong with the carrier substrate 100 from the overlying structures thatwill be formed in subsequent steps. In some embodiments, the releaselayer 102 is an epoxy-based thermal-release material, which loses itsadhesive property when heated, such as a Light-to-Heat-Conversion (LTHC)release coating. In other embodiments, the release layer 102 may be anultra-violet (UV) glue, which loses its adhesive property when exposedto UV lights. The release layer 102 may be dispensed as a liquid andcured, may be a laminate film laminated onto the carrier substrate 100,or may be the like. The top surface of the release layer 102 may beleveled and may have a high degree of co-planarity.

In FIGS. 9 through 11, a back side redistribution structure 114 isformed. The back side redistribution structure comprises dielectriclayers 104 and 110 and a metallization pattern 106. As illustrated inFIG. 9, the dielectric layer 104 is formed on the release layer 102. Thebottom surface of the dielectric layer 104 may be in contact with thetop surface of the release layer 102. In some embodiments, thedielectric layer 104 is formed of a polymer, which may be aphoto-sensitive material such as PBO, polyimide, BCB, or the like. Thedielectric layer 104 may be formed by any acceptable deposition process,such as spin coating, laminating, the like, or a combination thereof.

In FIG. 10, the metallization pattern 106 is formed on the dielectriclayer 104. As an example to form metallization pattern 106, a seed layer(not shown) is formed over the dielectric layer 104. In someembodiments, the seed layer is a metal layer, which may be a singlelayer or a composite layer comprising a plurality of sub-layers formedof different materials. In some embodiments, the seed layer comprises atitanium layer and a copper layer over the titanium layer. The seedlayer may be formed using, for example, PVD, sputtering, or the like. Aphoto resist is then formed and patterned on the seed layer. The photoresist may be formed by spin coating or the like and may be exposed tolight for patterning. The pattern of the photo resist corresponds to themetallization pattern 106. The patterning forms openings through thephoto resist to expose the seed layer. A metal is formed in the openingsof the photo resist and on the exposed portions of the seed layer. Themetal may be formed by plating, such as electroplating or electrolessplating, or the like. The metal may be copper, nickel, cobalt, titanium,tungsten, aluminum, or the like. Then, the photo resist and portions ofthe seed layer on which the metal is not formed are removed. The photoresist may be removed by an acceptable ashing or stripping process, suchas using an oxygen plasma or the like. Once the photo resist is removed,exposed portions of the seed layer are removed, such as by using anacceptable etching process, such as by wet or dry etching. The remainingportions of the seed layer and metal form the metallization pattern 106.

A metal oxide layered structure 108 is then formed on exposed surfacesof the metallization pattern 106. The metal oxide layered structure 108can have any of the structures illustrated in FIGS. 4A, 5A, 6A, 7A, and8A of the like, and can be formed by any of the methods outlined inFIGS. 4B, 5B, 6B, 7B, and 8B or the like.

In FIG. 11, the dielectric layer 110 is formed on the metallizationpattern 106 and the dielectric layer 104. In some embodiments, thedielectric layer 110 is formed of a polymer, which may be aphoto-sensitive material such as PBO, polyimide, BCB, or the like. Thedielectric layer 110 may be formed by spin coating, lamination, thelike, or a combination thereof. The dielectric layer 110 is thenpatterned to form openings to expose portions 112 of the metal oxidelayered structure 108 on the metallization pattern 106. When thedielectric layer 110 is a photo-sensitive material, the patterning maybe by exposing the dielectric layer 110 to light using a lithographymask and subsequently developing the dielectric layer 110. Otherpatterning techniques, such as etching, can be used.

As illustrated, the back side redistribution structure 114 includes twodielectric layers 104 and 110 and one metallization pattern 106. Inother embodiments, the back side redistribution structure 114 cancomprise any number of dielectric layers, metallization patterns, andvias. One or more additional metallization pattern and dielectric layermay be formed in the back side redistribution structure 114 by repeatingthe processes for forming a metallization pattern 106 and dielectriclayer 110. Vias may be formed during the formation of a metallizationpattern by forming the seed layer and metal of the metallization patternin the openings of the underlying dielectric layer. The vias maytherefore interconnect and electrically couple the various metallizationpatterns.

In FIG. 12, through vias 116 are formed. As an example to form thethrough vias 116, the exposed portions 112 of the metal oxide layeredstructure 108 are removed to expose portions of the metallizationpattern 106, and then, a seed layer (not shown) is formed on thedielectric layer 110 and the exposed portions of the metallizationpattern 106. The exposed portions 112 of the metal oxide layeredstructure 108 may be removed by a sputter etch or the like. In someembodiments, the seed layer is a metal layer, which may be a singlelayer or a composite layer comprising a plurality of sub-layers formedof different materials. In some embodiments, the seed layer comprises atitanium layer and a copper layer over the titanium layer. The seedlayer may be formed using, for example, PVD, sputtering, or the like.The exposed portions 112 of the metal oxide layered structure 108 can beremoved in a same processing chamber in which the seed layer is formed.A photo resist is then formed and patterned on the seed layer. The photoresist may be formed by spin coating or the like and may be exposed tolight for patterning. The pattern of the photo resist corresponds to thethrough vias 116. The patterning forms openings through the photo resistto expose the seed layer. A metal is formed in the openings of the photoresist and on the exposed portions of the seed layer. The metal may beformed by plating, such as electroplating or electroless plating, or thelike. The metal may be copper, titanium, tungsten, aluminum, or thelike. Then, the photo resist and portions of the seed layer on which themetal is not formed are removed. The photo resist may be removed by anacceptable ashing or stripping process, such as using an oxygen plasmaor the like. Once the photo resist is removed, exposed portions of theseed layer are removed, such as by using an acceptable etching process,such as by wet or dry etching. The remaining portions of the seed layerand metal form through vias 116. Because the portions 112 of the metaloxide layered structure 108 were removed from the metallization pattern106, direct metal-metal interfaces 118 are formed between the throughvias 116 and the metallization pattern 106.

Further in FIG. 12, an integrated circuit die 119 is adhered to thedielectric layer 110 by an adhesive 120. As illustrated, one integratedcircuit die 119 is adhered in a package structure, and in otherembodiments, more integrated circuit dies may be adhered in a packagestructure. Before being adhered to the dielectric layer 110, theintegrated circuit die 119 may be processed according to applicablemanufacturing processes to form an integrated circuit in the integratedcircuit die 119. For example, the integrated circuit die 119 comprises asemiconductor substrate 122. The semiconductor substrate 122 can be abulk semiconductor substrate, a semiconductor-on-insulator (SOI)substrate, multi-layered or gradient substrates, or the like. Thesemiconductor material of the semiconductor substrate 122 may be dopedor undoped and may include an elemental semiconductor, such as siliconor germanium; a compound or allow semiconductor including SiGe, SiC,GaAs, GaP, InP, InAs, InSb, GaAsP, AlInAs, AlGaAs, GaInAs, GaInP,GaInAsP, or the like; or a combination thereof. Devices, such astransistors, diodes, capacitors, resistors, etc., may be formed inand/or on the semiconductor substrate 122 and may be interconnected byinterconnect structures 124 formed by, for example, metallizationpatterns in one or more dielectric layers on the semiconductor substrate122 to form an integrated circuit.

The integrated circuit die 119 further comprises pads 126, such asaluminum pads, to which external connections are made. The pads 126 areon what may be referred to as an active side of the integrated circuitdie 119. A passivation film 128 is on the integrated circuit die 119 andon portions of the pads 126. Openings are through the passivation film128 to the pads 126. Die connectors 130, such as conductive pillars (forexample, comprising a metal such as copper), are in the openings throughpassivation film 128 and are mechanically and electrically coupled tothe respective pads 126. The die connectors 130 may be formed by, forexample, plating or the like. The die connectors 130 electrically couplethe integrated circuit of the integrate circuit die 119.

A dielectric material 132 is on the active side of the integratedcircuit die 119, such as on the passivation film 128 and the dieconnectors 130. The dielectric material 132 laterally encapsulates thedie connectors 130, and the dielectric material 132 is laterallyco-terminus with the integrated circuit die 119. The dielectric material132 may be a polymer such as PBO, polyimide, BCB, or the like; a nitridesuch as silicon nitride or the like; an oxide such as silicon oxide,PSG, BSG, BPSG, or the like; the like, or a combination thereof, and maybe formed, for example, by spin coating, lamination, CVD, or the like.

Adhesive 120 is on a back side of the integrated circuit die 119 andadheres the integrated circuit die 119 to the back side redistributionstructure 114, such as the dielectric layer 110 in the illustration. Theadhesive 120 may be any suitable adhesive, epoxy, or the like. Theadhesive 120 may be applied to a back side of the integrated circuit die119, such as to a back side of the respective semiconductor wafer. Theintegrated circuit die 119 may be singulated, such as by sawing ordicing, and adhered to the dielectric layer 110 by the adhesive 120using, for example, a pick-and-place tool.

In FIG. 13, an encapsulant 134 is formed on the various components. Theencapsulant 134 may be a molding compound, epoxy, or the like, and maybe applied by compression molding, transfer molding, or the like. Aftercuring, the encapsulant 134 can undergo a grinding process to expose thethrough vias 116 and die connectors 130. Top surfaces of the throughvias 116, die connectors 130, and encapsulant 134 are co-planar afterthe grinding process. In some embodiments, the grinding may be omitted,for example, if through vias 116 and die connectors 130 are alreadyexposed.

In FIGS. 14 through 20, a front side redistribution structure 166 isformed. As will be illustrated in FIG. 20, the front side redistributionstructure 166 comprises dielectric layers 136, 142, 152, and 162 andmetallization patterns 138, 146, and 156.

In FIG. 14, the dielectric layer 136 is formed on the encapsulant 134,through vias 116, and die connectors 130. In some embodiments, thedielectric layer 136 is formed of a polymer, which may be aphoto-sensitive material such as PBO, polyimide, BCB, or the like. Thedielectric layer 136 may be formed by spin coating, lamination, thelike, or a combination thereof. The dielectric layer 136 is thenpatterned to form openings to expose portions of the through vias 116and die connectors 130. When the dielectric layer 136 is aphoto-sensitive material, the patterning may be by exposing thedielectric layer 136 to light using a lithography mask and subsequentlydeveloping the dielectric layer 136. Other patterning techniques, suchas etching, can be used.

In FIG. 15, metallization pattern 138 with vias is formed on thedielectric layer 136. As an example to form metallization pattern 138, aseed layer (not shown) is formed over the dielectric layer 136 and inopenings through the dielectric layer 136. In some embodiments, the seedlayer is a metal layer, which may be a single layer or a composite layercomprising a plurality of sub-layers formed of different materials. Insome embodiments, the seed layer comprises a titanium layer and a copperlayer over the titanium layer. The seed layer may be formed using, forexample, PVD or the like. A photo resist is then formed and patterned onthe seed layer. The photo resist may be formed by spin coating or thelike and may be exposed to light for patterning. The pattern of thephoto resist corresponds to the metallization pattern 138. Thepatterning forms openings through the photo resist to expose the seedlayer. A metal is formed in the openings of the photo resist and on theexposed portions of the seed layer. The metal may be formed by plating,such as electroplating or electroless plating, or the like. The metalmay comprise a metal, like copper, nickel, cobalt, titanium, tungsten,aluminum, or the like. Then, the photo resist and portions of the seedlayer on which the metal is not formed are removed. The photo resist maybe removed by an acceptable ashing or stripping process, such as usingan oxygen plasma or the like. Once the photo resist is removed, exposedportions of the seed layer are removed, such as by using an acceptableetching process, such as by wet or dry etching. The remaining portionsof the seed layer and metal form the metallization pattern 138 and vias.The vias are formed in openings through the dielectric layer 136 to,e.g., the through vias 116 and/or the die connectors 130.

A metal oxide layered structure 140 is then formed on exposed surfacesof the metallization pattern 138. The metal oxide layered structure 140can have any of the structures illustrated in FIGS. 4A, 5A, 6A, 7A, and8A or the like, and can be formed by any of the methods outlined inFIGS. 4B, 5B, 6B, 7B, and 8B or the like.

In FIG. 16, the dielectric layer 142 is formed on the metallizationpattern 138 and the dielectric layer 136. In some embodiments, thedielectric layer 142 is formed of a polymer, which may be aphoto-sensitive material such as PBO, polyimide, BCB, or the like. Thedielectric layer 142 may be formed by spin coating, lamination, thelike, or a combination thereof. The dielectric layer 142 is thenpatterned to form openings to expose portions 144 of the metal oxidelayered structure 140 on the metallization pattern 138. When thedielectric layer 142 is a photo-sensitive material, the patterning maybe by exposing the dielectric layer 142 to light using a lithographymask and subsequently developing the dielectric layer 142. Otherpatterning techniques, such as etching, can be used.

In FIG. 17, metallization pattern 146 with vias is formed on thedielectric layer 142. As an example to form metallization pattern 146,the exposed portions 144 of the metal oxide layered structure 140 areremoved to expose portions of the metallization pattern 138, and then, aseed layer (not shown) is formed on the dielectric layer 142 and theexposed portions of the metallization pattern 138. The exposed portions144 of the metal oxide layered structure 140 may be removed by a sputteretch or the like. In some embodiments, the seed layer is a metal layer,which may be a single layer or a composite layer comprising a pluralityof sub-layers formed of different materials. In some embodiments, theseed layer comprises a titanium layer and a copper layer over thetitanium layer. The seed layer may be formed using, for example, PVD,sputtering, or the like. The exposed portions 144 of the metal oxidelayered structure 140 can be removed in a same processing chamber inwhich the seed layer is formed. A photo resist is then formed andpatterned on the seed layer. The photo resist may be formed by spincoating or the like and may be exposed to light for patterning. Thepattern of the photo resist corresponds to the metallization pattern146. The patterning forms openings through the photo resist to exposethe seed layer. A metal is formed in the openings of the photo resistand on the exposed portions of the seed layer. The metal may be formedby plating, such as electroplating or electroless plating, or the like.The metal may be copper, nickel, cobalt, titanium, tungsten, aluminum,or the like. Then, the photo resist and portions of the seed layer onwhich the metal is not formed are removed. The photo resist may beremoved by an acceptable ashing or stripping process, such as using anoxygen plasma or the like. Once the photo resist is removed, exposedportions of the seed layer are removed, such as by using an acceptableetching process, such as by wet or dry etching. The remaining portionsof the seed layer and metal form the metallization pattern 146 and vias.The vias are formed in openings through the dielectric layer 142 to,e.g., portions of the metallization pattern 138. Because the portions144 of the metal oxide layered structure 140 were removed from themetallization pattern 138, direct metal-metal interfaces 148 are formedbetween the vias of the metallization pattern 146 and the metallizationpattern 138.

A metal oxide layered structure 150 is then formed on exposed surfacesof the metallization pattern 146. The metal oxide layered structure 150can have any of the structures illustrated in FIGS. 4A, 5A, 6A, 7A, and8A or the like, and can be formed by any of the methods outlined inFIGS. 4B, 5B, 6B, 7B, and 8B or the like.

In FIG. 18, the dielectric layer 152 is formed on the metallizationpattern 146 and the dielectric layer 142. In some embodiments, thedielectric layer 152 is formed of a polymer, which may be aphoto-sensitive material such as PBO, polyimide, BCB, or the like. Thedielectric layer 152 may be formed by spin coating, lamination, thelike, or a combination thereof. The dielectric layer 152 is thenpatterned to form openings to expose portions 154 of the metal oxidelayered structure 150 on the metallization pattern 146. When thedielectric layer 152 is a photo-sensitive material, the patterning maybe by exposing the dielectric layer 152 to light using a lithographymask and subsequently developing the dielectric layer 152. Otherpatterning techniques, such as etching, can be used.

In FIG. 19, metallization pattern 156 with vias is formed on thedielectric layer 152. As an example to form metallization pattern 156,the exposed portions 154 of the metal oxide layered structure 150 areremoved to expose portions of the metallization pattern 146, and then, aseed layer (not shown) is formed on the dielectric layer 152 and theexposed portions of the metallization pattern 146. The exposed portions154 of the metal oxide layered structure 150 may be removed by a sputteretch or the like. In some embodiments, the seed layer is a metal layer,which may be a single layer or a composite layer comprising a pluralityof sub-layers formed of different materials. In some embodiments, theseed layer comprises a titanium layer and a copper layer over thetitanium layer. The seed layer may be formed using, for example, PVD,sputtering, or the like. The exposed portions 154 of the metal oxidelayered structure 150 can be removed in a same processing chamber inwhich the seed layer is formed. A photo resist is then formed andpatterned on the seed layer. The photo resist may be formed by spincoating or the like and may be exposed to light for patterning. Thepattern of the photo resist corresponds to the metallization pattern156. The patterning forms openings through the photo resist to exposethe seed layer. A metal is formed in the openings of the photo resistand on the exposed portions of the seed layer. The metal may be formedby plating, such as electroplating or electroless plating, or the like.The metal may be copper, nickel, cobalt, titanium, tungsten, aluminum,or the like. Then, the photo resist and portions of the seed layer onwhich the metal is not formed are removed. The photo resist may beremoved by an acceptable ashing or stripping process, such as using anoxygen plasma or the like. Once the photo resist is removed, exposedportions of the seed layer are removed, such as by using an acceptableetching process, such as by wet or dry etching. The remaining portionsof the seed layer and metal form the metallization pattern 156 and vias.The vias are formed in openings through the dielectric layer 152 to,e.g., portions of the metallization pattern 146. Because the portions154 of the metal oxide layered structure 150 were removed from themetallization pattern 146, direct metal-metal interfaces 158 are formedbetween the vias of the metallization pattern 156 and the metallizationpattern 146.

A metal oxide layered structure 160 is then formed on exposed surfacesof the metallization pattern 156. The metal oxide layered structure 160can have any of the structures illustrated in FIGS. 4A, 5A, 6A, 7A, and8A or the like, and can be formed by any of the methods outlined inFIGS. 4B, 5B, 6B, 7B, and 8B or the like.

In FIG. 20, the dielectric layer 162 is formed on the metallizationpattern 156 and the dielectric layer 152. In some embodiments, thedielectric layer 162 is formed of a polymer, which may be aphoto-sensitive material such as PBO, polyimide, BCB, or the like. Thedielectric layer 162 may be formed by spin coating, lamination, thelike, or a combination thereof. The dielectric layer 162 is thenpatterned to form openings to expose portions 164 of the metal oxidelayered structure 160 on the metallization pattern 156. When thedielectric layer 162 is a photo-sensitive material, the patterning maybe by exposing the dielectric layer 162 to light using a lithographymask and subsequently developing the dielectric layer 162. Otherpatterning techniques, such as etching, can be used.

The front side redistribution structure 166 is shown as an example. Moreor fewer dielectric layers and metallization patterns may be formed inthe front side redistribution structure 166. If fewer dielectric layersand metallization patterns are to be formed, steps and process discussedabove may be omitted. If more dielectric layers and metallizationpatterns are to be formed, steps and processes discussed above may berepeated. One having ordinary skill in the art will readily understandwhich steps and processes would be omitted or repeated.

In FIG. 21, pads 168, which may be referred to as Under BumpMetallurgies (UBMs), are formed on an exterior side of the front sideredistribution structure 166. In the illustrated embodiment, pads 168are formed through openings through the dielectric layer 162 to themetallization pattern 156. As an example to form the pads 168, theexposed portions 164 of the metal oxide layered structure 160 areremoved to expose portions of the metallization pattern 156, and then, aseed layer (not shown) is formed on the dielectric layer 162 and theexposed portions of the metallization pattern 156. The exposed portions164 of the metal oxide layered structure 160 may be removed by a sputteretch or the like. In some embodiments, the seed layer is a metal layer,which may be a single layer or a composite layer comprising a pluralityof sub-layers formed of different materials. In some embodiments, theseed layer comprises a titanium layer and a copper layer over thetitanium layer. The seed layer may be formed using, for example, PVD,sputtering, or the like. The exposed portions 164 of the metal oxidelayered structure 160 can be removed in a same processing chamber inwhich the seed layer is formed. A photo resist is then formed andpatterned on the seed layer. The photo resist may be formed by spincoating or the like and may be exposed to light for patterning. Thepattern of the photo resist corresponds to the pads 168. The patterningforms openings through the photo resist to expose the seed layer. Ametal is formed in the openings of the photo resist and on the exposedportions of the seed layer. The metal may be formed by plating, such aselectroplating or electroless plating, or the like. The metal may becopper, titanium, tungsten, aluminum, or the like. Then, the photoresist and portions of the seed layer on which the metal is not formedare removed. The photo resist may be removed by an acceptable ashing orstripping process, such as using an oxygen plasma or the like. Once thephoto resist is removed, exposed portions of the seed layer are removed,such as by using an acceptable etching process, such as by wet or dryetching. The remaining portions of the seed layer and metal form thepads 168. The pads 168 are formed in openings through the dielectriclayer 162 to, e.g., portions of the metallization pattern 156. Becausethe portions 164 of the metal oxide layered structure 160 were removedfrom the metallization pattern 156, direct metal-metal interfaces 170are formed between the pads 168 and the metallization pattern 156.

In FIG. 22, external electrical connectors 172, such as solder balls,like ball grid array (BGA) balls, are formed on the pads 168. Theexternal electrical connectors 172 may include a low-temperaturereflowable material such as solder, which may be lead-free orlead-containing. The external electrical connectors 172 may be formed byusing an appropriate ball drop process. In some embodiments, the pads168 can be omitted, and the external electrical connectors 172 can beformed directly on the metallization pattern 156 through the openingsthrough the dielectric layer 162.

In FIG. 23, a carrier substrate de-bonding is performed to detach(de-bond) the carrier substrate 100 from the back side redistributionstructure 114, e.g., dielectric layer 104. In accordance with someembodiments, the de-bonding includes projecting a light such as a laserlight or an UV light on the release layer 102 so that the release layer102 decomposes under the heat of the light and the carrier substrate 100can be removed. The structure is then flipped over and placed on a tape174. Openings are formed through the dielectric layer 104 to exposeportions of the metallization pattern 106. The openings may be formed,for example, using laser drilling, etching, or the like.

Although not specifically illustrated, one of ordinary skill in the artwill readily understand that typically the structures formed in FIGS. 9through 23 are also simultaneously formed in other regions of thecarrier substrate 100, which may be a wafer. Accordingly, a singulationprocess is performed, such as by sawing, to singulate a single package180 from other packages that may have been formed simultaneously withthe package 180.

As illustrated in FIGS. 24 through 27, the package 180 can beincorporated into a variety of chip-on-package (CoP) andpackage-on-package (PoP) structures. FIGS. 24 through 27 are examplestructures, and the package 180 can be incorporated in any packagestructure. In FIGS. 24 through 27, the package 180 is attached to asubstrate 182. The external electrical connectors 172 are electricallyand mechanically coupled to pads 184 on the substrate 182. The substrate182 can be, for example, a printed circuit board (PCB) or the like.

In FIG. 24, an integrated circuit die 300 (or chip) is attached to theback side redistribution structure 114 of the package 180 by externalelectrical connectors 302. The integrated circuit die 300 can be anyintegrated circuit die, such as a logic die, analog die, memory die, orthe like. The integrated circuit die 300 is electrically andmechanically coupled to the back side redistribution structure 114 byexternal electrical connectors 302 attached to the metallization pattern106 through openings through the dielectric layer 104. The externalelectrical connectors 302 can include low-temperature reflowablematerial, such as solder, such as a lead-free solder, and in additionalembodiments, the external electrical connectors 302 can include metalpillars. In some embodiments, the external electrical connectors 302 arecontrolled collapse chip connection (C4) bumps, microbumps, or the like.In some embodiments, the external electrical connectors 302 can bereflowed to attach the integrated circuit die 300 to the package 180. Anunderfill material 304 can also be dispensed between the integratedcircuit die 300 and the backside redistribution structure 114 of thepackage 180 and around the external electrical connectors 302.

In FIG. 25, a package component 310 is attached to the back sideredistribution structure 114 of the package 180 by external electricalconnectors 312. The package component 310 in this example includes anintegrated circuit die flip-chip attached to an interposer. Theintegrated circuit die can be any integrated circuit die, such as alogic die, analog die, memory die, or the like. The package component310 is electrically and mechanically coupled to the back sideredistribution structure 114 by external electrical connectors 312attached to the metallization pattern 106 through openings through thedielectric layer 104. The external electrical connectors 312 can includelow-temperature reflowable material, such as solder, such as a lead-freesolder, and in additional embodiments, the external electricalconnectors 312 can include metal pillars. In some embodiments, theexternal electrical connectors 312 are C4 bumps, microbumps, or thelike. In some embodiments, the external electrical connectors 312 can bereflowed to attach the package component 310 to the package 180.

In FIG. 26, a package 320 is attached to the back side redistributionstructure 114 of the package 180 by external electrical connectors 322.The package 320 comprises a substrate, two stacked integrated circuitdies on the substrate, wire bonds electrically coupling the integratedcircuit dies to the substrate, and an encapsulant encapsulating thestacked integrated circuit dies and the wire bonds. In an example, theintegrated circuit dies of the package 320 are memory dies, such asdynamic random access memory (DRAM) dies. The package 320 iselectrically and mechanically coupled to the back side redistributionstructure 114 by external electrical connectors 322 attached to themetallization pattern 106 through openings through the dielectric layer104. In some embodiments, the external electrical connectors 322 caninclude low-temperature reflowable material, such as solder, such as alead-free solder, and in additional embodiments, the external electricalconnectors 322 can include metal pillars. In some embodiments, theexternal electrical connectors 322 are C4 bumps, microbumps, or thelike. In some embodiments, the external electrical connectors 322 can bereflowed to attach the package 320 to the metallization pattern 106. Theintegrated circuit dies of the package 320 are electrically andcommunicatively coupled to the integrated circuit die 119 through, forexample, the wire bonds and substrate in the package 320, the externalelectrical connectors 322, the back side redistribution structure 114,through vias 116, and the front side redistribution structure 166.

In FIG. 27, a package 330 is attached to the back side redistributionstructure 114 of the package 180 by external electrical connectors 332.The package 330 can be similar to the package 180 and can be formed bysimilar processes. For example, in comparison to the package 180,generally, the package 330 omits a back side redistribution structureand through vias. In an example, the integrated circuit die of thepackage 330 can be a logic die, analog die, memory die such as a dynamicrandom access memory (DRAM) die, or the like. The package 330 iselectrically and mechanically coupled to the back side redistributionstructure 114 by external electrical connectors 332 attached to themetallization pattern 106 through openings through the dielectric layer104. In some embodiments, the external electrical connectors 332 caninclude low-temperature reflowable material, such as solder, such as alead-free solder, and in additional embodiments, the external electricalconnectors 332 can include metal pillars. In some embodiments, theexternal electrical connectors 332 are C4 bumps, microbumps, or thelike. In some embodiments, the external electrical connectors 332 can bereflowed to attach the package 330 to the metallization pattern 106. Theintegrated circuit die of the package 330 are electrically andcommunicatively coupled to the integrated circuit die 119 through, forexample, the a front side redistribution structure of the package 330,the external electrical connectors 332, the back side redistributionstructure 114, through vias 116, and the front side redistributionstructure 166.

Embodiments may achieve some advantages. For example, by providing ametal oxide layered structure on a metallization pattern and between themetallization pattern and a dielectric layer, such as a photo-sensitivedielectric material, adhesion may be improved. This improved adhesionmay reduce a risk of delamination between the metallization pattern andthe dielectric layer.

An embodiment is a structure. The structure includes an integratedcircuit die at least laterally encapsulated by an encapsulant, and aredistribution structure on the integrated circuit die and encapsulant.The redistribution structure is electrically coupled to the integratedcircuit die. The redistribution structure includes a first dielectriclayer on at least the encapsulant, a metallization pattern on the firstdielectric layer, a metal oxide layered structure on the metallizationpattern, and a second dielectric layer on the first dielectric layer andthe metallization pattern. The metal oxide layered structure includes ametal oxide layer having a ratio of metal atoms to oxygen atoms that issubstantially 1:1, and a thickness of the metal oxide layered structureis at least 50 Å. The second dielectric layer is a photo-sensitivematerial. The metal oxide layered structure is disposed between themetallization pattern and the second dielectric layer.

Another embodiment is a structure. The structure comprises an integratedcircuit die, an encapsulant at least laterally encapsulating theintegrated circuit die, a first dielectric layer on the encapsulant andan active side of the integrated circuit die, a metallization pattern onthe first dielectric layer, an adhesion layer on the metallizationpattern, and a second dielectric layer on the first dielectric layer andthe adhesion layer. The metallization pattern is electrically coupled tothe active side of the integrated circuit die. The adhesion layercomprises a metal oxide layer having a ratio of metal atoms to oxygenatoms that is substantially 1:1, and a thickness of the adhesion layeris at least 50 Å. The second dielectric layer is a photo-sensitivematerial.

A further embodiment is a method. The method comprises encapsulating anintegrated circuit die with an encapsulant; forming a dielectric layerover the encapsulant and the integrated circuit die; forming ametallization pattern over the dielectric layer; treating themetallization pattern with an oxygen-containing plasma, the treatingforming a metal oxide layer having a ratio of metal atoms to oxygenatoms that is substantially 1:1 over the metallization pattern, athickness of the metal oxide layer being at least 50 Å; and forming aphoto-sensitive material over the metal oxide layer.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method comprising: forming a metallic structureover a dielectric layer, the dielectric layer being located over anencapsulant encapsulating a semiconductor die; and adding oxygen to aportion of the metallic structure until the portion of the metallicstructure has a ratio of metal atoms to oxygen atoms that issubstantially 1:1, a thickness of the portion being at least 50 Å. 2.The method of claim 1, wherein the adding oxygen comprises forming anative oxide from the metallic structure.
 3. The method of claim 2,wherein the adding oxygen comprises exposing the portion of the metallicstructure to an oxygen-containing plasma.
 4. The method of claim 3,further comprising forming a native oxide from at least part of theportion of the metallic structure.
 5. The method of claim 1, furthercomprising forming a native oxide from at least part of the portion ofthe metallic structure.
 6. The method of claim 1, wherein the addingoxygen comprises: removing a native oxide; and exposing the portion ofthe metallic structure to an oxygen-containing plasma.
 7. The method ofclaim 1, further comprising: forming a native oxide from at least partof the portion of the metallic structure; and forming a metallic oxidelayer over the native oxide, the metallic oxide layer having a ratio ofmetal atoms to oxygen atoms that is substantially 1:1.
 8. A methodcomprising: encapsulating though vias and a semiconductor die with anencapsulant; forming a metallization pattern over the encapsulant; andexposing the metallization pattern to an oxygen-containing plasma toform a metal-oxide layer, the metal-oxide layer having a ratio of atomsof oxygen to atoms of a metal of substantially 1:1, the metal-oxidelayer being at least 50 Å thick.
 9. The method of claim 8, furthercomprising removing a native oxide from the metallization pattern priorto the exposing the metallization pattern.
 10. The method of claim 8,wherein the oxygen-containing plasma comprises an ozone plasma.
 11. Themethod of claim 10, wherein the oxygen-containing plasma furthercomprises nitrogen.
 12. The method of claim 8, further comprisingforming a native oxide after the exposing the metallization pattern. 13.The method of claim 12, further comprising exposing the native oxide toa second oxygen-containing plasma to form a second metal oxide-layer,the second metal-oxide layer having a second ratio of atoms of oxygen toatoms of a metal of substantially 1:1.
 14. The method of claim 12,further comprising forming a dielectric layer in physical contact withthe native oxide.
 15. The method of claim 8, further comprising forminga native oxide prior to the exposing the metallization pattern.
 16. Amethod comprising: encapsulating an integrated circuit die with anencapsulant; forming a dielectric layer over the encapsulant and theintegrated circuit die; forming a metallization pattern over thedielectric layer; treating the metallization pattern with anoxygen-containing plasma, the treating forming a metal oxide layerhaving a ratio of metal atoms to oxygen atoms that is substantially 1:1over the metallization pattern, a thickness of the metal oxide layerbeing at least 50 Å; and forming a photo-sensitive material over themetal oxide layer.
 17. The method of claim 16 further comprisingremoving a native oxide from the metallization pattern before thetreating the metallization pattern.
 18. The method of claim 16, whereinthe treating the metallization pattern forms the metal oxide layer on anative oxide, the native oxide being disposed between the metallizationpattern and the metal oxide layer.
 19. The method of claim 16, whereinthe thickness is not more than 200 Å.
 20. The method of claim 16,wherein the thickness is not more than 100 Å.